研究所【專題討論】課程，電機/資工系專題演講，演講資訊如下:

講題: 半導體製程和元件電性的模擬及簡介高壓元件原理與設計
演講者: 黃宗義博士/台積電
時間：114年11月14日(五)14:00~16:00
地點: 理工二館第四講堂 (A307) 在3F

演講者: 黃宗義
題目:半導體製程和元件電性的模擬及簡介高壓元件原理與設計
摘要說明：介紹如何使用TCAD軟體，模擬半導體製程與元件電性。如何分析MOSFETs的基本 I-V電性。說明那些電子元件可以使用TCAD軟體模擬。如何精進TCAD模擬元件電性及準確性的技巧。介紹高壓元件的結構和基本原理及其最佳化設計。
演講者資歷:台積電資深經理
Tsung-Yi Huang was born in Kaohsiung, Taiwan, R.O.C. in 1969. He received the B.S. degree in physics science, the M.S. degree and the Ph.D. degree in electrical engineering from the National Tsing Hua University, Hsinchu, Taiwan, in 1992, 1994, and 2001, respectively. From 1998 to 2002, he worked as a TCAD Engineer for Avan! and Syopsys. From 2002 to 2008, he worked for tsmc as the technological manager. He is responsible for the device profile modeling and device electrical characterization at advanced device department. Then, he transfers to the high voltage program for developing the BCD and ultra-high voltage technology. He worked for Leadtrend from 2018 to 2020, work for tsmc from 2020 until now. He joined the ISPSD technical program committee from 2017 to 2021.
Experience: Join IEEE ISPSD TPC from Y2017 to Y2021.
Publish 30 papers in HV/BCD devices field and 106 US Patents .

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